Reinhard Kersting oral presentation (RM-Thu2-2-2)
Comparison of Surface Analytical Techniques on Atomic Layer Deposition Samples
1 Tascon GmbH, Mendelstr. 17, 48149 Münster, Germany
2 Institute of Analytical Chemistry - University Muenster, Corrensstr. 30, 48149 Muenster, Germany
3 Tascon GmbH, Mendelstr. 17, 48149 Muenster, Germany
The analytical techniques Low Energy Ion Scattering (LEIS), Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS) and X-Ray Photoelectron Spectroscopy (XPS) differ in information depth and quantification options. Aim of this study was to compare these quality criteria with respect to the analysis of samples generated by Atomic Layer Deposition (ALD).
For this purpose, a series of ALD layers providing different degrees of coverage and/or layer thickness of the coated material were analysed by different modes of the respective techniques. In the LEIS analysis, the excitation was performed with 4He+ as well as 20Ne+ primary ions. In ToF-SIMS, primary ion species as well as energies were varied, whereas in XPS analyses under 45° as well as under 10° were performed.
The application of these different techniques enables a cross-validation of the results. Moreover, options and limitations of the individual techniques are compared. Finally, a modelling of the layer system is possible by the LEIS and XPS results. The obtained analytical information by ToF-SIMS is compared with respect to this model system.