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SIMS21, Poland 2017 - Kathryn G Lloyd abstract

Kathryn G Lloyd oral presentation (OA3-Tue3-3-3)

Depth Profiling or “Just Sputtering”? How advances in sputter beam technology and data reduction have made ToF-SIMS even more useful in a (non-semiconductor) industrial environment

Kathryn G Lloyd, James R Marsh

DuPont - Experimental Station, P.O. Box 8352, DE 19803 Wilmington, United States

The term “depth profiling” has historically involved a flat surface, knowledge of sputter rates or comparison to doped standards, awareness of the influence of sputter angle, and protocols optimized over many years within the semiconductor industry.

By those standards, the manner in which we are using ToF-SIMS to obtain sub-surface chemical information cannot rigorously be called “depth profiling”. Consider a paint film with roughness on the order of several microns, or polymeric materials embedded in epoxy, or inorganic filler in organic or inorganic matrices. Determining a depth scale using profilometry can be challenging. Differential sputtering is typically a concern. Sputtering artifacts exist.

This presentation will show examples of some of the sputtering ToF-SIMS applications in an industrial environment that have been made possible through the implementation of new Argon cluster sputter beams and/or the use of multivariate statistics to aid in understanding and visualizing the data.