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SIMS21, Poland 2017 - RONG JI abstract

RONG JI oral presentation (SN3-Thu4-2-2)

TOF SIMS Study of CuO Nanowires

RONG JI1, Kaichen Xu2, Zhenxiang Xing1,2, Mingsheng Zhang1, Suey Li Toh1, Minghui Hong2

1 Data Storage Institute, 2 Fusionopolis Way #08-01 Innovis S138634, 138634 Singapore, Singapore
2 National University of Singapore, 4 Engineering Drive 3, 117576 Singapore, Singapore


CuO nanowire-based technologies have been found more and more applications, such as nano-electronic circuits, field emission displays, solar cells, flexible transparent electronics, solar fuels and electronic-skin, etc. To meet the requirement of these applications, the synthesis and fabrication of nanowires have both fundamental and practical importance. At the same time, material characterization and analysis of the nanostructured Cu/CuO also becomes significant important.

In this paper, CuO nanowires on Cu foil were prepared through laser ablation plus thermal oxidation. Multi-analytical tools such as SEM, XRD, XPS and TOF-SIMS are applied to study the morphology, structure and composition of the copper oxides. After optimizing the operating condition, TOF-SIMS analysis presents the clear visualization pictures of the CuO nanowires and the related composition variation. It is concluded that the laser ablation influences the morphology of the copper surfaces and the thickness of Cu2O and CuO/Cu2O bilayer formed on copper foil surfaces. Furthermore, these factors affect the density and orientation of CuO nanowires after the thermal oxidation. Thorough the study, the related CuO nanowires growth mechanism is discussed.