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SIMS21, Poland 2017 - Marek Pajek abstract

Marek Pajek oral presentation (FN1-Mon4-2-5)

L- and M-X-ray production cross sections for MeV heavy ions

Marek Pajek, Dariusz Banaś

Institute of Physics, Jan Kochanowski University, Swietokrzyska 15, 25-406 Kielce, Poland

The secondary ions mass spectrometry (SIMS) using MeV heavy ions is expected to improve a sensitivity of SIMS analysis due to increased sputtering yields for electronic energy losses dominating MeV ion interaction with matter. For these energies the increased ion-impact ionization cross sections allow to observe the excited X-rays carrying important information on the elemental composition of a sample, including the trace element, whic is known as the particle induced X-ray emission (PIXE) technique. Consequently, such combination of SIMS and PIXE is a realization of the total ion beam analysis (IBA) approach, which improves a characterization of the studied samples. In particular, the MeV-SIMS/PIXE techniques can be applied at the ion microbeam facilities allowing thus 2D microanalysis of the samples.

In this paper the basic aspects of the L- and M-X-rays excitation by MeV heavy ion impact will be discussed. In particular, theoretical description of inner-shell ionization by ion-impact for asymmetric (Z1<

The multiple ionization, usually treated in the independent-electron picture, results in the satellite structure of X-ray transitions, which for a moderate energy resolution of a semiconductor detector used, appear as the shifted and broadened X-ray lines. In addition, the X-ray fluorescence and Coster-Kronig yields can be modified substantially in multiply ionized atoms, which is important for quantitative analysis in heavy ion PIXE. The L- and M-shells ionization probabilities for heavy atoms, which determine the multiple ionization effects in X-ray spectra, will be presented systematically for MeV C, N, O, Si and S ion impact. These results will allow to determine in details a role of the multiple ionization effects in the heavy ion PIXE.

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