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SIMS21, Poland 2017 - Sunan Ding abstract

Sunan Ding oral presentation (SN2-Tue3-2-3)

New Developments and Applications of SIMS Technology in Semiconductor Industry

Sunan Ding, Xiaoming Lu, Hui Yang

SuZhou Institute of Nano-tech and Nano-bionics, CAS, RuoShui Rd, 215123 SuZhou, China


It has been more than 30 years since SIMS technology was widely used in semiconductor industry. From micro-electronics to nano-electronics, the devices are scaling down in size quickly and require very high depth and special resolutions for SIMS analysis, such as, depth profiling of shallow implant within 10 nm. In addition, quantitative analysis of implant doses in semiconductor materials is still a big challenge for dynamic SIMS, due to the unavailability of suitable standard samples, matrix effects in special materials and structures of devices, etc..

In this talk, we will present a few unique methods developed for dynamic SIMS analyses of depth profiles of Zn diffusion in InP-based optoelectronic devices, very shallow As doping profile in Si devices, B implant profile in photoresist layer, and H, C, O contaminations at dielectrics/Si interfaces. By using these methods, we found first the effect of window size on Zn diffusion profiles, and also improved the depth resolution of dynamic SIMS to the similar level of TOF-SIMS for As ultra-shallow implant profile in Si. For depth profiling elements in high-k C-doped oxides (CDO) and photoresist films, we have built novel procedures to minimize or eliminate the shrinkage in film thickness that was caused by the electron beams used for charging compensation.

Novel application of SIMS analysis in future for nano-materials and devices characterizations, combining with other state-of-art analytical techniques together in an UHV interconnected system, is going to be introduced and discussed too.