Paweł Piotr Michałowski oral presentation (PB2-Mon4-1-2)
Graphene Enhanced Secondary Ion Mass Spectroscopy (GESIMS)
Instytut Technologii Materiałów Elektronicznych, Wólczyńska 133, 01-919 Warszawa, Poland
The following invention - Graphene Enhanced Secondary Ion Mass Spectroscopy - (pending European patent application no. EP 16461554.4) is related to a method of analysing a solid substrate by means of Secondary Ion Mass Spectroscopy (SIMS). It comprises the steps of providing a graphene layer over the substrate surface and analysing ejected secondary anions through mass spectrometry analysis. The presence of the graphene layer significantly increases the negative ionization probability and thus the intensity of the SIMS signal can be more than two orders of magnitude higher than that of a similar sample without graphene. The method is particularly useful for the analysis of surfaces, 2D materials and ultra-thin films. The intensity of dopants and contamination signals can be enhanced up to 35 times, which approaches the detection limit of ~1015 atoms/cm3, otherwise unreachable in a standard static SIMS analysis.