Shin-ichi Iida oral presentation (PB3-Fri2-1-3)
Cross-section Observation of Organic-Inorganic Hybrid Materials Using FIB-TOF-SIMS
1 ULVAC-PHI Inc., Enzo 370, 253-8522 Chigasaki, Japan
2 Physical Electronics Inc., 18725 Lake Drive East, MN 55317 Chanhassen, United States
TOF-SIMS (Time-of-Flight Secondary Ion Mass Spectrometry) is one of the most powerful techniques to determine the distribution of elemental and molecular species at outermost surface with high sensitivity. In TOF-SIMS, the sputter depth profiling method has been commonly used to know the chemical depth distributions. In general, cesium and oxygen ions are utilized for inorganic materials, and cluster ions such as C60+ and Arn+ are utilized for organic materials as sputtering ions. However, when the sample is composed of an organic-inorganic hybrid mixture, or even a pure organic sample with layers of differing composition, sputter depth profiling will cause difficulty to obtain the accurate information of depth distributions due to the differential sputtering. Thus, it is necessary to find a new method for depth profiling of such materials.
In this study, in order to overcome the limitation of sputter depth profiling, we carried out cross-section analysis using FIB-TOF-SIMS. This method has been shown to be useful for inorganic materials which have complex structure. On the other hand, the damage would be significant for organic materials. Therefore, first, we investigated the FIB-induced damage layer on the polymer surface, and optimized the sputtering condition of Ar-GCIB to remove the damaged layer. This method was applied to analysis of an organic-inorganic hybrid material. The sample is polycarbonate with glass fibers having a diameter of dozens of microns. Figure 1 shows the TOF-SIMS images of the FIB cross-section surface before and after removing the damaged layer by Ar-GCIB. Using FIB-TOF-SIMS, it was found that accurate molecular and elemental information can be obtained from organic-inorganic hybrid materials.